Accession Number : AD0629689

Title :   JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,

Corporate Author : ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Holonyak,N. ,Jr. ; Sirkis,M. D. ; Nuese,C. J. ; Moore,J. S. ; Stillman,G.

Report Date : SEP 1965

Pagination or Media Count : 14

Abstract : Some results of Zn-diffusion in Ga(As(1-x)P(X)) and their effects on laser junctions are summarized. Pulsed operation of Ga(As(1-x)P(X)) lasers to temperatures beyond 200K is described. Self-oscillation phenomena (instabilities) in bulk n-type Si counter-doped with Au or Co are discussed briefly. These oscillations occur at typically 1 Mc or lower frequencies in Co-compensated Si and to well above 100 Mc in Au-compensated Si. (Author)

Descriptors :   (*SEMICONDUCTORS, LASERS), (*LASERS, SEMICONDUCTORS), GALLIUM COMPOUNDS, ARSENIC, PHOSPHORUS COMPOUNDS, SEMICONDUCTOR DIODES, ZINC, DIFFUSION, DOPING, SILICON, GOLD, COBALT, OSCILLATION, ELECTRICAL PROPERTIES

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE