Accession Number : AD0632105

Title :   CONTINUOUS ULTRAVIOLET ABSORPTION BY NEUTRAL SILICON,

Corporate Author : HARVARD COLL OBSERVATORY CAMBRIDGE MASS

Personal Author(s) : Rich,John C.

Report Date : APR 1966

Pagination or Media Count : 44

Abstract : Photoionization cross sections (bound-free absorption coefficients) were measured for the 3s2 3p2 triplet-P ground state and singlet-D excited level of the neutral silicon atom. The measurements, made in absorption with the use of reflected shock techniques,yield cross sections of about 37 and 34 megabarns respectively, near the ionization limits. Theoretical quantum defect calculations give satisfactory comparisons. The next excited singlet-S level is discussed. (Author)

Descriptors :   (*SOLAR SPECTRUM, SILICON), (*SILICON, ABSORPTION SPECTRA), (*ULTRAVIOLET SPECTROSCOPY, SILICON), PHOTOCHEMICAL REACTIONS, IONIZATION, PROBABILITY, ATOMIC ENERGY LEVELS, EXCITATION, SOLAR ATMOSPHERE

Subject Categories : Astrophysics
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE