Accession Number : AD0632779

Title :   NEW SOLID-STATE DEVICE CONCEPTS,

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Aven,M.

Report Date : MAR 1966

Pagination or Media Count : 46

Abstract : The electrical behavior of ZnSe sub x Te sub 1-x light-emitting diodes is analyzed in terms of the bulk electrical properties of the n- and p-type junction components. It is proposed that the mechanism of charge transport in the diodes involves photo-excitation with subsequent minority carrier trapping, which leaves the majority carriers free to carry current. A number of device applications based on the photoexcitation and quenching phenomena observed are discussed. A study of the mechanism of oxidation of silicon shows that there are serious difficulties with the simple models that are offered to explain the observed oxidation rates and electrochemical phenomena. The energy levels and diffusion characteristics of the various defects that might be active during oxidation are discussed, and a new model for silicon oxidation is outlined. The electrical properties of diodes made from thin films of high-resistivity GaAs show both a negative resistance and an interesting storage effect. A theory based on injected avalanche is proposed to explain the negative resistance. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, *LUMINESCENCE), SEMICONDUCTOR DIODES, ELECTROLUMINESCENCE, PHOTOCHEMICAL REACTIONS, PHOTOCONDUCTIVITY, ZINC ALLOYS, SELENIUM, TELLURIUM ALLOYS, GALLIUM ALLOYS, ARSENIC, SILICON, OXIDATION, FILMS, SOLID STATE PHYSICS

Subject Categories : Electrical and Electronic Equipment
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE