Accession Number : AD0633478
Title : HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Descriptive Note : Quarterly interim development rept. no. 4, 27 Feb-27 May 66,
Corporate Author : CHATHAM ELECTRONICS DIV TUNG-SOL ELECTRIC INC LIVINGSTON N J
Personal Author(s) : Ake,Nelson E.
Report Date : 27 FEB 1966
Pagination or Media Count : 20
Abstract : One of the latest design planar silicon dioxide passivated diodes has been fabricated into an EBM tube. The diode used in the tube has a reverse breakdown voltage of 900 volts measured at 300 microamps. The reverse leakage current was 8 microamps at 500 volts. The diode maintained its hard characteristics through sealing the heat sink to the envelope and sealing the electron gun to the glass envelope. However, after processing the diode appeared to be electrically shorted. After a current surge in the reverse direction the diode had a reverse voltage breakdown of 150 volts, and after standing over the weekend this voltage breakdown increased to 300 volts. It is planned to investigate further to try to determine the cause of this apparent deterioration during tube processing. Upon further processing of the gun cathode it was discovered that the heater was opened. The reason for this has not been determined and this tube will be dissected and examined after some further experimenting with the diode. (Author)
Descriptors : (*SEMICONDUCTORS, POWER AMPLIFIERS), (*POWER AMPLIFIERS, *SEMICONDUCTOR DIODES), PULSE AMPLIFIERS, LEAKAGE(ELECTRICAL), ELECTRON GUNS, BEAM POWER TUBES, PERFORMANCE(ENGINEERING), DEGRADATION, BONDING, PROCESSING, SOLID STATE PHYSICS, SEMICONDUCTOR DEVICES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE