Accession Number : AD0634088

Title :   THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE.

Descriptive Note : Quarterly rept. no. 6, 1 Oct-31 Dec 65,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS

Personal Author(s) : Bowe,J. J. ; Schelhorn,R. L. ; Shallcross,F. V. ; Waxman,A. S. ; Weimer,P. K.

Report Date : MAY 1966

Pagination or Media Count : 61

Abstract : Capacitance measurements on CdS-Si0-Al structures at various well-controlled temperatures have indicated that the nature of the instabilities under applied bias can be irreversibly changed by heating the sample in vacuum from 25 to 50 C. Several mechanisms appear to be involved in these instabilities. Silica films deposited by resistance heating of Si02 are under study as encapsulants for M-I-S structures; refractive index data imply that the Si02 films are not completely stoichiometric. Photoemission of electrons into thin-film vapor-deposited insulators has been used to study the energy band diagram of thin-film vapor-deposited metal-insulator-semiconductor contacts and thin-film metal-insulator-metal contacts. The insulators studied to date have been Si0 and Si02. We have found a barrier between Si0 and Au of 3.6 plus or minus 0.15 eV and an energy barrier of 4.8 plus or minus 0.2 eV between Si0 and CdSe. The photocurrent-voltage relationships of M-I-S structures and metal-insulator-metal structures are briefly discussed. (Author)

Descriptors :   (*TRIODES, SEMICONDUCTING FILMS), (*TRANSISTORS, SEMICONDUCTING FILMS), MICROSTRUCTURE, CADMIUM ALLOYS, SELENIUM ALLOYS, CADMIUM COMPOUNDS, SILICON COMPOUNDS, SULFIDES, OXIDES, PHOTOELECTRIC EFFECT, VOLTAGE

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE