Accession Number : AD0634345

Title :   RELAXATION PHENOMENA AT HIGH ELECTRIC FIELD ON THE SURFACES OF INDIUM ANTIMONIDE.

Descriptive Note : Technical rept.,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Huff, Howard ; Kawaji,Shinji

Report Date : MAY 1966

Pagination or Media Count : 10

Abstract : It was found that high transverse pulsed electric fields applied to indium antimonide surfaces brought about tunneling currents which are extracted through a surface film to the semiconductor bulk. A slow surface state has been located approximately 0.06 eV below the conduction band edge on the (111) A surface of n-InSb. (Author)

Descriptors :   (*INTERMETALLIC COMPOUNDS, SEMICONDUCTORS), (*INDIUM ALLOYS, ANTIMONY ALLOYS), (*TUNNELING(ELECTRONICS), SEMICONDUCTORS), ELECTRIC FIELDS, FILMS, SURFACES, RELAXATION TIME, BAND THEORY OF SOLIDS

Subject Categories : Metallurgy and Metallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE