Accession Number : AD0634763
Title : AN ADVANCEMENT IN TRANSISTOR SECOND BREAKDOWN PERFORMANCE USING MOLYBDENUM METALIZATION.
Descriptive Note : Technical rept.,
Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Personal Author(s) : Hakim, Edward B.
Report Date : MAY 1966
Pagination or Media Count : 16
Abstract : Transistors which have become inoperative due to collector-emitter short circuits have usually been driven into second breakdown itself, however, is not the destructive mechanism. Alloying of the contact metalization into the device produces the short circuit which is observed. This report describes the experimental results of transistors having molybdenum-aluminum metalization compared to devices with only aluminum contacts. The results indicated that devices with molybdenum, when driven into second breakdown, would outlive aluminum units with respect to current by a factor of three. (Author)
Descriptors : (*TRANSISTORS, PERFORMANCE(ENGINEERING)), FAILURE(ELECTRONICS), MOLYBDENUM, METAL COATINGS, SILICON, ELECTRIC TERMINALS, TRANSIENTS, LEAKAGE(ELECTRICAL), PHASE STUDIES, ALUMINUM
Subject Categories : Electrical and Electronic Equipment
Coatings, Colorants and Finishes
Distribution Statement : APPROVED FOR PUBLIC RELEASE