Accession Number : AD0634828

Title :   PRODUCTION ENGINEERING MEASURE FOR INSULATED GATE FIELD EFFECT TRANSISTORS.

Descriptive Note : Quarterly progress rept. no. 1, 30 Nov 65-28 Feb 66,

Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s) : George, James ; Reinke,Dale

Report Date : 28 FEB 1966

Pagination or Media Count : 63

Abstract : A complete basic design is presented for the high frequency Insulated Gate Field Effect Transistor, MOS stability is examined and a general filure mode discussion is presented. It is found that most noncatastrophic failures result from the movement of charged ionic species in the gate oxide. In order to minimize this instability different stabilizing techniques are reported with emphasis on those applicable to the MOS production area. The effect of various etches, solvents, and rinses on device stability and performance are listed, and results are presented on the difference in processing sequences such as hot evaporation and cold evaporation, with and without a phosphorus-stabilized system. The production sequence for the RF MOSFET is listed as well as progress in improved packaging techniques. Final probing and testing capabilities for the RF MOS device are outlined. (Author)

Descriptors :   (*TRANSISTORS, MANUFACTURING), RELIABILITY(ELECTRONICS), TRANSISTOR AMPLIFIERS, VERY HIGH FREQUENCY, NOISE(RADIO), GAIN, FAILURE(ELECTRONICS), OXIDES, STABILITY, SEMICONDUCTORS, SILICON

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE