Accession Number : AD0635136

Title :   RESEARCH FOR DEVELOPMENT OF EPITAXIAL TECHNIQUES FOR USE IN FABRICATION OF SILICON CARBIDE DEVICES.

Descriptive Note : Final scientific rept., 1 Feb 65-31 Jan 66.

Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s) : Jackson, Don

Report Date : 13 MAY 1966

Pagination or Media Count : 64

Abstract : Attempts were made to fabricate p-n junction diodes and SiC channel isolated-gate field-effect transistors. P-type doping was not possible and, consequently, the p-n junction work was terminated without success. Attempts to make n-channel, SiC IGFET's on silicon substrates were not successful, nor were attempts to fabricate the same structures on sapphire substrates. Silicon IGFET structures with acceptable device quality parameters were grown using identical techniques, demonstrating the feasibility of the approach. No acceptable SiC device characteristics were demonstrated during this contract. This could be attributed to poor structure quality, or the presence of an anomaly such as impurity bands which would inhibit device action. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, EPITAXIAL GROWTH), (*SILICON COMPOUNDS, CARBIDES), SEMICONDUCTOR DIODES, TRANSISTORS, SUBSTRATES, DOPING, BAND THEORY OF SOLIDS, SEMICONDUCTOR DEVICES, CHLORIDES, SILANES, PROPANE, MICROSTRUCTURE

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE