Accession Number : AD0635190
Title : MOS INTEGRATED CIRCUITS.
Descriptive Note : Quarterly rept. no. 3, 1 Jan-31 Mar 66.
Corporate Author : WESTINGHOUSE ELECTRIC CORP ELKRIDGE MD MOLECULAR ELECTRONICS DIV
Personal Author(s) : Sikina, T. ; Tsai,J. ; van Beek,H. ; Roe,C.
Report Date : JUN 1966
Pagination or Media Count : 38
Abstract : The reports contains the results on the process improvements to develop an integrated semiconductor memory utilizing complementary MOS transistors. Various factors which affect process control were investigated. An optimum structure for obtaining complementary regions of p-type and n-type silicon is given. Complementary pairs of normally-off n-channel and p-channel devices were obtained both on separate and on a single substrate material. The cleanliness during the process is an important factor which affects the reproducibility and the uniformity of the device characteristics. (Author)
Descriptors : (*INTEGRATED CIRCUITS, *TRANSISTORS), METALS, OXIDES, SEMICONDUCTORS, SUBSTRATES, PROCESSING, SILICON, EPITAXIAL GROWTH, MEMORY DEVICES, PRECISION FINISHING
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE