Accession Number : AD0635267
Title : HIGH ENERGY ION IMPLANTATION OF MATERIALS.
Descriptive Note : Rept. for 28 Dec 64-30 Apr 66.
Corporate Author : ION PHYSICS CORP BURLINGTON MASS
Personal Author(s) : Kellett, C. M. ; King,W. J. ; Martin,F. W. ; McNally,P. ; Leith,F. A.
Report Date : MAY 1966
Pagination or Media Count : 110
Abstract : The report describes investigations conducted on the implantation of high energy (>50 kev) dopant ions into semiconductors for the formation of controlled doped layers. Investigations were conducted with B and P ions for p- and n-type layers in Si, SiC and diamond, and Zn and S for p- and n-type layers in GaAs, respectively. Extensive theoretical and experimental work was performed in range-energy relationships in silicon to provide a firm foundation for device work. Results of these investigations were used in the fabrication of active devices, particularly a form of unipolar transistor which lends itself to implantation processing. Successful fabrication was demonstrated and high frequency types are currently being developed. Implanted doped layers were formed in GaAs, SiC and diamond with diode formation demonstrated in GaAs and diamond. Preliminary results indicate that ion implantation may be the best method for handling such materials. (Author)
Descriptors : (*SEMICONDUCTORS, *DOPING), (*TRANSISTORS, DOPING), (*ION BOMBARDMENT, DOPING), ION BEAMS, BORON, PHOSPHORUS, ZINC, SULFUR, SILICON, SILICON COMPOUNDS, CARBIDES, DIAMONDS, GALLIUM ALLOYS, ARSENIC ALLOYS, PROCESSING, SEMICONDUCTOR DIODES, SPUTTERING, ANNEALING, MANUFACTURING
Subject Categories : Pumps, Filters, Pipes, Tubing, Fittings & Vlvs
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE