Accession Number : AD0635287

Title :   INVESTIGATION OF SOLID STATE DEVICES AND MATERIALS.

Corporate Author : NORTHEASTERN UNIV BOSTON MASS

Personal Author(s) : Cochrun, Basil L.

Report Date : 01 FEB 1966

Pagination or Media Count : 34

Abstract : Procedures and techniques were developed for the purpose of evaluating new semiconductor active devices. The characteristics of interest are noise, gain, frequency limits of operation and temperature stability. Theoretical and experimental results indicate that the potential discontinuity associated with metal-semiconductor injuctions is dependent upon interface contaminations and surface state effects. A study of materials and fabrication techniques led to more efficient diode lasers. A theoretical explanation was derived for the fine structure of the far-field radiation pattern exhibited by GaAs diodes. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, TEST METHODS), NOISE, GAIN, FREQUENCY, THERMAL STABILITY, MATERIALS, CONTAMINATION, SURFACE PROPERTIES, SEMICONDUCTOR DIODES, LASERS, GALLIUM ALLOYS, ARSENIC ALLOYS, LINE SPECTRA

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE