Accession Number : AD0635400
Title : NEW SOLID-STATE DEVICE CONCEPTS.
Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER
Personal Author(s) : Aven, N. ; Hall,R. N. ; Richardson,J. R. ; Woodbury,H. H.
Report Date : JUL 1966
Pagination or Media Count : 30
Abstract : Experiments on the diffusion of Se in ZnSe were made. This and earlier work indicate that in all the II-IV compounds the chalcogenide component diffuses by a mechanism other than simple vacancy diffusion. This result is of fundamental importance to an understanding of the defect structure of these materials. The electrical properties of the different components of ZnSe sub X Te sub (1-x) light emitting diodes at 80K have been investigated. The current-voltage characteristic of the junction region agrees with classical junction theory. Under self-illumination, the currents carried by the n- and p-type bulk regions were ohmic. The major current-limiting factor is the electrical contact to the p-type side of the junction. A mask changer and evaporation rate monitor are being assembled in order to improve the reproducibility of the GaAs switching diodes. Resistivity measurements of evaporated GaAs films yielded values in the 100,000 ohm-cm range at 300K. No Hall mobility has yet been detected. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, MATERIALS), (*LASERS, SEMICONDUCTOR DEVICES), SEMICONDUCTORS, ZINC ALLOYS, SELENIUM ALLOYS, TELLURIUM ALLOYS, DIFFUSION, SEMICONDUCTOR DIODES, GALLIUM ALLOYS, ARSENIC ALLOYS, SEMICONDUCTING FILMS, LUMINESCENCE, FILMS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE