Accession Number : AD0635495
Title : ULTRAHIGH PRESSURE STUDIES AND CRYSTAL GROWTH TECHNIQUES: ANALYTICAL SURVEY.
Descriptive Note : Rept. no. 1 on ATD work assignment no. 79, task 25.
Corporate Author : AEROSPACE TECHNOLOGY DIV LIBRARY OF CONGRESS WASHINGTON D C
Personal Author(s) : Kourilo, John J.
Report Date : 17 MAY 1966
Pagination or Media Count : 64
Abstract : This report is divided into two main parts (analytical evaluation of data and annotated bibliography), each having three sections. The three sections are: general studies, ultrahigh pressure studies, and crystal growth techniques, in that order. Section 3 was further subdivided, for the purpose of retrieval, into six chapters according to the category of the growth technique. The chapters are: A. Growth from melts; B. Growth from solution (flux); C. Hydrothermal growth; D. Growth from vapor phase; E. Epitaxial growth of thin films; F. Other growth techniques. The report includes material dealing with ultrahigh pressure studies and techniques of single crystal growth (including deposition of single crystalline thin films) of the elemental semiconductors and semiconducting, lasing, luminescent, ferroelectric, ferromagnetic, piezoelectric, dielectric, and other inorganic compounds which may be of interest for aerospace technology.
Descriptors : (*CRYSTALS, *HIGH PRESSURE), (*CRYSTAL GROWTH, SINGLE CRYSTALS), USSR, ABSTRACTS, BIBLIOGRAPHIES, FILMS, SEMICONDUCTORS, EPITAXIAL GROWTH, SEMICONDUCTING FILMS, LASERS, PIEZOELECTRIC CRYSTALS, LUMINESCENCE, FERROELECTRIC CRYSTALS, FERROMAGNETIC MATERIALS, DIELECTRICS, INORGANIC COMPOUNDS
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE