Accession Number : AD0635978
Title : MATHEMATICAL INVESTIGATIONS OF SEMICONDUCTOR DEVICES.
Descriptive Note : Final rept. no. 1, 1 Apr 65-1 Apr 66.
Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y COMPONENTS DEPT
Personal Author(s) : Kennedy, D. P.
Report Date : APR 1966
Pagination or Media Count : 185
Abstract : A mathematical analysis is presented on the impurity atom distribution with a Small Current Amplifying Device (SCAD). This analysis is in two spatial variables, and it includes the mixed boundary conditions encountered in a paractical semiconductor device. Computer calculated impurity atom distributions are graphically illustrated to show the two-dimensional p-n junction profile obtained in a SCAD when the gate junction is fabricated by a two-step impurity atom diffusion process. From these calculated p-n junction profiles, the present investigation is extended to include avalanche breakdown mechanisms in diffusxed planar p-n junctions. Unlike previous investigations on this topic, the present analysis takes into consideration junction curvature and its influence upon carrier multiplication within a p-n junction space-charge layer. To further understand SCAD operations, a mathematical investigation is presented on the la1ge current properties of the linearly graded p-n junction. From this analysis, it is shown that classical depletion layer theory provides a relatively inaccurate view of the mechanisms encountered in a forward biased structure. For this reason, before establishing a detailed mathematical theory of SCAD operation, it appears necessary to undertake a similar study on the mechanisms of diffused p-n junction operation. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, MATHEMATICAL ANALYSIS), IMPURITIES, DISTRIBUTION, DIFFUSION, THEORY, ELECTROSTATICS, SPACE CHARGE, TRANSISTOR AMPLIFIERS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE