
Accession Number : AD0635978
Title : MATHEMATICAL INVESTIGATIONS OF SEMICONDUCTOR DEVICES.
Descriptive Note : Final rept. no. 1, 1 Apr 651 Apr 66.
Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y COMPONENTS DEPT
Personal Author(s) : Kennedy, D. P.
Report Date : APR 1966
Pagination or Media Count : 185
Abstract : A mathematical analysis is presented on the impurity atom distribution with a Small Current Amplifying Device (SCAD). This analysis is in two spatial variables, and it includes the mixed boundary conditions encountered in a paractical semiconductor device. Computer calculated impurity atom distributions are graphically illustrated to show the twodimensional pn junction profile obtained in a SCAD when the gate junction is fabricated by a twostep impurity atom diffusion process. From these calculated pn junction profiles, the present investigation is extended to include avalanche breakdown mechanisms in diffusxed planar pn junctions. Unlike previous investigations on this topic, the present analysis takes into consideration junction curvature and its influence upon carrier multiplication within a pn junction spacecharge layer. To further understand SCAD operations, a mathematical investigation is presented on the la1ge current properties of the linearly graded pn junction. From this analysis, it is shown that classical depletion layer theory provides a relatively inaccurate view of the mechanisms encountered in a forward biased structure. For this reason, before establishing a detailed mathematical theory of SCAD operation, it appears necessary to undertake a similar study on the mechanisms of diffused pn junction operation. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, MATHEMATICAL ANALYSIS), IMPURITIES, DISTRIBUTION, DIFFUSION, THEORY, ELECTROSTATICS, SPACE CHARGE, TRANSISTOR AMPLIFIERS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE