Accession Number : AD0636481

Title :   DEVELOPMENT OF A TRANSISTOR-VARACTOR DIODE CAPABLE OF 5 WATTS OUTPUT AT 2.3 GIGAHERTZ.

Descriptive Note : Interim technical rept. no. 4, 1 Mar-31 May 66.

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : Jacobson, D. S. ; Lee,H. C.

Report Date : 31 MAY 1966

Pagination or Media Count : 19

Abstract : Photomasks for a webbed base finger metallizing pattern were designed, fabricated and successfully utilized to define the metallization pattern on a number of TA2790 wafers. These masks were designed to eliminate the 'pinch-off' of the base fingers at their intersection with the collector oxide. Devices processed, from recent diffusion runs exhibited improved UHF amplifier and amplifier-multiplier performance, however, these devices showed a tendency toward catastrophic failure during operation. Diffusion runs on wafers with redesigned epitaxial layers have been initiated to minimize burn-out difficulties. Photomasks for a two-step integral lead process were fabricated and evaluated. Difficulties encountered in the definition of the final integral lead pattern were attributed to photomask defects. TA2790 units mounted in plastic coaxial packages were evaluated at 1 gigahertz as common base amplifiers. A power output of approximately 3.5 watts and a collector efficiency of 39 percent with a 0.5-watt drive were obtained for these units. This reporesents a significant improvement in performance over that of devices mounted in stripline packages. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, MICROWAVE EQUIPMENT), (*FREQUENCY MULTIPLIERS, SEMICONDUCTOR DEVICES), TRANSISTORS, VARACTOR DIODES, RADIOFREQUENCY POWER, PHOTOENGRAVING, DIFFUSION, FAILURE(ELECTRONICS), PACKAGING, COAXIAL CABLES, AMPLIFIERS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE