Accession Number : AD0637067
Title : A METHOD OF REMOVING THE SURFACE FILM FORMED AFTER THE DIFFUSION OF BORON ON THE SURFACE OF SILICON.
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s) : Huang,Cheng-sung
Report Date : 09 MAY 1966
Pagination or Media Count : 7
Abstract : In using B2O3 as an impurity source to form a P-N bond by diffusion on the surface of a N-type silicon sheet, a thin layer of a blue or dark gray film will be formed if the temperature of diffusion is too high and the time is too long. A simple electrolytic method of removing that surface film is proposed. It destroys the film formed on the surface of silicon after diffusion without corroding the silicon itself.
Descriptors : (*SEMICONDUCTORS, *ELECTROLYTIC POLISHING), (*SILICON, ELECTROLYTIC POLISHING), DOPING, BORON, DIFFUSION, FILMS, ELECTROLYSIS, MATERIALS, REMOVAL, CHINA
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE