Accession Number : AD0637114
Title : PRODUCTION ENGINEERING MEASURE FOR SILICON NPN SWITCHING TRANSISTORS.
Descriptive Note : Quarterly progress rept. no. 2, 25 Aug-25 Nov 65.
Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Personal Author(s) : Steinmann,Charles ; Freese,Jack
Report Date : 25 NOV 1965
Pagination or Media Count : 23
Abstract : An increase in basewidth resulted in improved beta and breakdown voltage range control. Diffusion time, temperature, and gas flow variations was studied and show no adverse variation. A change in oxide etching solution and temperature resulted in increased photoresist yields. Test of KMER versus KTFR emulsions have shown KMER to be superior in small pattern processing. The cause of discolored aluminum metallization was traced to the presence of oxygen in the evaporator. Installation of an ultrasonic wire bonder and in-process quality assurance wire bond inspection proved to be valuable in increasing assembly yields. (Author)
Descriptors : (*TRANSISTORS, MANUFACTURING), (*ELECTRONIC SWITCHES, TRANSISTORS), SILICON, PHOTOETCHING, DOPING, ETCHING, DIFFUSION, OXIDES, ALUMINUM COATING, ASSEMBLY, PACKAGING, RELIABILITY(ELECTRONICS), QUALITY CONTROL, ULTRASONIC WELDING
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE