Accession Number : AD0637691

Title :   ANNEALING OF GAMMA-RAY INDUCED DEFECTS IN BI-DOPED GERMANIUM.

Corporate Author : HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s) : Tseng ,Ben ; Ausman,George , Jr

Report Date : JUN 1966

Pagination or Media Count : 15

Abstract : A preliminary study was made of the isochronal annealing of gamma-ray induced defects in bismuth-doped germanium in the temperature range 318 to 523 K. Comparison of the results with previous studies on arsenic- and antimony-doped germanium confirms that the annealing processes in gamma-irradiated n-type germanium are strongly dependent on type of donor impurity. A possible explanation is given for the differences in the annealing behavior, based on differences in the covalent sizes of the donors. (Author)

Descriptors :   (*GERMANIUM, ANNEALING), (*ANNEALING, DEFECTS(MATERIALS)), BISMUTH, DOPING, DAMAGE, RADIATION EFFECTS, SEMICONDUCTORS

Subject Categories : Metallurgy and Metallography
      Fabrication Metallurgy
      Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE