Accession Number : AD0638729

Title :   MICROWAVE SEMICONDUCTOR OSCILLATOR AND AMPLIFIER.

Descriptive Note : Technical rept.

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Higgins,Vincent J. ; Brand,Frank A. ; Baranowski,Joseph J.

Report Date : AUG 1966

Pagination or Media Count : 31

Abstract : P-N junction diodes, both silicon and gallium arsenide, oscillate at microwave frequencies when reverse biased into avalanche. Principal mechanism of oscillation is the creation of a dynamic ac negative resistance through avalanche transit time effects. This report presents details on the performance characteristics of p-n junction evalanche oscillators including description of a signal substitution measurement technique. This technique permits accurate measurement of closely spaced by distinct oscillations without the use of filters and is used to detect, observe, and characterize avalanche oscillation in the frequency range 6 - 50 GHz. Details of experimental results on CW and pulsed oscillations, including rf outputs, dc to rf efficiency, tunability, stability, and parametric effects are given for GaAs oscillators. Comparative oscillation performance of some silicon avalanche oscillators is also given. In addition, details of recent avalanche amplifier investigations are presented. Principal highlights of these avalanche devices are oscillation outputs of over 25 mW at 13 GHz with 5.7% efficiency, 1000 MHz tunable bandwidths for 2:1 power changes; amplifiers are 44 db gain at -60 dbm, and 12 db gain at 0 dbm in the 12 - 15 GHz frequency range. (Author)

Descriptors :   (*MICROWAVE OSCILLATORS, SEMICONDUCTOR DIODES), (*MICROWAVE AMPLIFIERS, SEMICONDUCTOR DIODES), (*AVALANCHE DIODES, MICROWAVE EQUIPMENT), GALLIUM ALLOYS, ARSENIC ALLOYS, SILICON, SEMICONDUCTOR DEVICES, IONIZATION, PERFORMANCE(ENGINEERING)

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE