Accession Number : AD0641277

Title :   DIFFUSED LAYERS OF SEMICONDUCTIVE COMPOUNDS OF GROUP III AND V,

Corporate Author : INSTITUTE OF MODERN LANGUAGES INC WASHINGTON D C

Personal Author(s) : Gunther,K.

Report Date : OCT 1966

Pagination or Media Count : 7

Abstract : With the semiconductive compounds of elements of group III and group V (indicate in ref. 1,) we have available substances characterized by a high Hall coefficient and high electron mobility and consequently particularly suitable for the production of efficient Hall elements, so-called Hall generators. Among these compounds, indium antimonide and arsenide are especially appropriate for this purpose. In order to increase sensitivity as well as for reasons of matching, it is desirable to produce compounds of this type in the form of thin films. If we utilize the method of vacuum diffusion, considerable difficulties result which are based, in the last analysis, on the different vapor pressures of the two individual components. As a consequence, the substances, under heating in vacuum, decompose, diffuse in fractions and give rise to the formation of inhomogeneous films which consist of superposed zones of the individual components.

Descriptors :   (*SEMICONDUCTING FILMS, *DIFFUSION COATING), WEST GERMANY, INDIUM ALLOYS, ANTIMONY ALLOYS, ARSENIC ALLOYS, CRYSTAL GROWTH, HALL EFFECT

Subject Categories : Fabrication Metallurgy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE