Accession Number : AD0641401

Title :   PRODUCTION ENGINEERING MEASURE FOR INSULATED GATE FIELD EFFECT TRANSISTORS.

Descriptive Note : Quarterly progress rept. no. 2, 1 Mar-31 May 66,

Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s) : George,James K. ; Reinke,Dale ; Hswe,Myint ; Forehand,Harry

Report Date : 31 MAY 1966

Pagination or Media Count : 79

Abstract : The work centered mainly in four areas: two new photolithographic mask sets were devised to insure the necessary geometrical variations were investigated. These new sets will enable both epitaxial and nonepitaxial techniques to be more fully developed; stable processing steps were formulated with results shown on capacitance-voltage plots; advanced devices were fabricated using information obtained from the initial production group; reliability information was compiled and certain conclusions were drawn. (Author)

Descriptors :   (*TRANSISTORS, MANUFACTURING), MASKING, METALS, OXIDES, SEMICONDUCTORS, SILICON, RELIABILITY(ELECTRONICS), STABILITY, PERFORMANCE(ENGINEERING), FAILURE(ELECTRONICS)

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE