Accession Number : AD0641613

Title :   THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.

Descriptive Note : Final rept. no. 10, 1 Jun 63-31 May 66,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Gaze,Michael J. F.

Report Date : OCT 1966

Pagination or Media Count : 54

Abstract : Resistors formed by reactively sputtered tantalum in oxygen have been produced with a practical upper sheet resistance limit of 300 ohms/sq in. The temperature coefficient of the oxygen doped tantalum resistors is generally less than 150 ppm/C. The temperature coefficient can be reduced by gold doping the tantalum-tantalum oxide mixture. Tantalum oxide dielectrics have been deposited by reactive sputtering in oxygen. The dielectric constant is 21, dielectric strength 0.025 V/A and dissipation factor from 1 to 2%. The practical upper limit on capacitance per unit area is 0.35 pF/sq mil or 0.35 microfarads/sq in. It has been found that the addition of low resistivity semi-conducting MnO2 to the capacitor structure greatly increases the free-from-shorts-yield. The causes of instability in the deposited resistors has been investigated and the faults corrected by a specially designed sputtering unit. The resistor and capacitor development was accomplished using silicon as the substrate material. This simulates combining the resistor and capacitor with diffused silicon devices to form hybrid structures. (Author)

Descriptors :   (*FILMS, *SPUTTERING), (*RESISTORS, TANTALUM), TANTALUM COMPOUNDS, OXIDES, DIELECTRIC FILMS, DOPING, PREPARATION

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE