Accession Number : AD0642524

Title :   METAL BASE TRANSISTOR II.

Descriptive Note : Rept. no. 4 (final) 1 Jul 64-30 Jun 65,

Corporate Author : PHILCO BLUE BELL PA APPLIED RESEARCH LAB

Personal Author(s) : Kane,Walter ; Hershinger,Lincoln

Report Date : JUL 1966

Pagination or Media Count : 71

Abstract : The mean-free-path of electrons in several metal films was determined and found to be independent of deposition rate and substrate temperature. The minimum thickness for continuity of such films was also found to be independent of substrate temperatures, and varies with deposition rate only for low rates. Values of mean-free-path and minimum thickness are given. It is indicated that the very low values of t sub min/hot-electron mean-free-path necessary for a high-gain metal-base transistor are not likely to be obtained. The characteristics of the triodes fabricated during this program have been analyzed, and it has been concluded that the important gain mechanism is the control of current flow through a grid-like structure, formed by a partially agglomerated base film. The control of composition gradient in ZnCdS films is seen to permit fabrication of thin-film Schottky diodes having predictable barrier heights, yielding a method of controlling diode characteristics. (Author)

Descriptors :   (*TRANSISTORS, *FILMS), METAL FILMS, SEMICONDUCTING FILMS, SEMICONDUCTOR DIODES, ELECTRICAL RESISTANCE, GAIN, THICKNESS, GOLD, MANUFACTURING, SULFIDES, VAPOR PLATING, ELECTRICAL CONDUCTIVITY, SUBSTRATES, ZINC COMPOUNDS, CADMIUM COMPOUNDS, AGING(MATERIALS)

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE