Accession Number : AD0642573

Title :   AN INTERFEROMETRIC EFFECT WITH SEMICONDUCTORS IN THE MILLIMETER WAVE REGION.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Jacobs,Harold ; Morris,George ; Hofer,Ronald

Report Date : OCT 1966

Pagination or Media Count : 32

Abstract : Calculations and experiments have been carried out relating to multiple internal reflections of millimeter waves in semiconductors for a specific system composed of air, a semiconductor panel, an air gap, and a metal reflector. If the thickness of the semiconductor and air gap is chosen at critical values, and if the conductivity of germanium is chosen properly, it is found that complete absorption will result and no reflection occurs. Next in these types of systems, the semiconductor conductivity can be varied electronically, i.e., injection of excess free carriers by light, by electron bombardment, or by current being carried across a junction. Changes in conductivity result in variations in reflected power. The sensitivity of such a system opens up the possibility of a new family of devices for instruments for physical measurements and quasi-optical systems. Three examples of new devices are described as follows: (1) a device for amplitude modulation of millimeter and submillimeter waves; (2) an interferometer for measurement of wavelength in this region; (3) an approach for conversion of millimeter and submillimeter wave images into visual displays. (Author)

Descriptors :   (*SEMICONDUCTORS, *RADIO INTERFEROMETERS), MILLIMETER WAVES, WAVE PROPAGATION, MODULATORS, MICROWAVE EQUIPMENT, CATHODE RAY TUBES, IMAGE INTENSIFIERS(ELECTRONICS), SEMICONDUCTOR DEVICES, IMAGES, MODULATION

Subject Categories : Solid State Physics
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE