Accession Number : AD0643779

Title :   THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE.

Descriptive Note : Final rept., 1 Jul 64-30 Jun 66,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS

Personal Author(s) : Topfer,M. L. ; Bowe,J. J. ; Danis,A. H. ; Ellis,S. G. ; Fabula,J. J.

Report Date : NOV 1966

Pagination or Media Count : 139

Abstract : The report covers the work on the thin-film polycrystalline field-effect triode during the period of July 1, 1964 to June 30, 1966. All of the work on the contract is reviewed. The following work done during the eighth quarter is also covered. The behavior of the reversible gate instability at temperatures between -40C and +60C is discussed. The investigation was carried out to determine the variation of the instability mechanism with temperature. These initial measurements are too preliminary to draw conclusions. The masks for the four-input NOR/OR gate circuit were received, and the wire grille was fabricated. Initial trial runs with these masks to evaluate the alignment were completed and proved satisfactory. Fabrication of the integrated circuit was initiated. Work was initiated to investigate the controlled deposition and nucleation of semiconductor films, and an investigation of gate threshold shifts was carried out, in order to gain a better understanding of the mechanism of the TFT instability. (Author)

Descriptors :   (*TRANSISTORS, SEMICONDUCTING FILMS), MICROSTRUCTURE, CADMIUM COMPOUNDS, SULFIDES, SEMICONDUCTOR DEVICES, CADMIUM ALLOYS, SELENIUM ALLOYS, PHOTOELECTRIC EFFECT, MANUFACTURING, SILICON COMPOUNDS, OXIDES, CAPACITANCE, VOLTAGE, SURFACE PROPERTIES, MASKING, GATES(CIRCUITS)

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE