Accession Number : AD0645221
Title : PROCEEDINGS OF THE CONFERENCE ON RELIABILITY OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS, VOLUME I, 17, 18 AND 19 JUNE 1964, NEW YORK, N. Y.
Corporate Author : OFFICE OF THE DIRECTOR OF DEFENSE RESEARCH AND ENGINEERING WASHINGTON DC ADVISORY GROUP ON ELECTRON DEVICES
Report Date : 19 JUN 1964
Pagination or Media Count : 204
Abstract : Contents: Internal reliability support effort at USAEL for the PEM program; Reliability improvement on VHF amplifier designs and processes; Step stress testing as a means of evaluating reliability of the PNP silicon alloy transistor; Improving the reliability of the PNP silicon alloy transistor; Reliability improvement of 2N336 and 2N2193 transistors; Preparation and effects of dislocations and resistivity of germanium single crystals; A universal test set for the measurement of thermal resistance; The use of infra-red techniques for transistor thermal resistance measurement; Improved reliability by means of material selection and production sampling; Application of ultrasonic energy to eutectic wafer bonding of transistors; Reliability improvements; Reliability verification of microcircuits through accelerated testing; Current microelectronic reliability testing in relation to silicon semiconductor networks; Reliability improvement process evaluation.
Descriptors : (*RELIABILITY(ELECTRONICS), SYMPOSIA), (*SEMICONDUCTOR DEVICES, RELIABILITY(ELECTRONICS)), (*INTEGRATED CIRCUITS, RELIABILITY(ELECTRONICS)), AMPLIFIERS, VERY HIGH FREQUENCY, TRANSISTORS, DISLOCATIONS, GERMANIUM, SINGLE CRYSTALS, TEST SETS, THERMAL CONDUCTIVITY, QUALITY CONTROL, ULTRASONIC WELDING, MICROELECTRONICS, ELECTRICAL NETWORKS, SILICON
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE