Accession Number : AD0645469
Title : SOME FACTORS AFFECTING THE GROWTH OF BETA SILICON CARBIDE.
Descriptive Note : Physical sciences research papers,
Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Personal Author(s) : Ryan,Charles E. ; Berman,Irvin ; Marshall,Robert C. ; Considine,Dennis P. ; Hawley,John J.
Report Date : SEP 1966
Pagination or Media Count : 23
Abstract : The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author)
Descriptors : (*CRYSTAL GROWTH, *SILICON CARBIDES), SINGLE CRYSTALS, SILANES, CHLORINE COMPOUNDS, IMPURITIES, COMPLEX COMPOUNDS
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE