Accession Number : AD0646445

Title :   AN INVESTIGATION OF THE INTERFACE STATES OF THE GERMANIUM-SILICON ALLOYED HETEROJUNCTION.

Descriptive Note : Final rept.,

Corporate Author : PURDUE UNIV LAFAYETTE IND SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Reenstra,A. L. ; Thompson,H. W.

Report Date : JAN 1967

Pagination or Media Count : 111

Abstract : The alloyed germanium-silicon heterojunction interface is studied to more conclusively determine if interface states exist due to dislocations, or if an impurity contamination exists at the interface. A profile of the mixing of he the silicon and germanium is determined for the alloyed heterojunction by employing an electron microprobe for a spectrochemical analysis. The mixing is shown to be diffusion controlled. In n-n type heterojunctions, a p-type layer is observed to form at the interface. Hall coefficient, conductivity and capacitance measurements are made on this p-layer using the p-n junctions to the bulk regions for isolation. From the electrical measurements and the electron-microprobe analysis, there is very strong evidence to show the interface states to be caused by dislocations. These measurements rule out the two sources of impurities as a cause of the interface states and show direct evidence of dislocations causing the interface states. It can therefore be concluded that the source of interface states in the alloyed germanium-silicon heterojunction is dislocations rather than impurities. (Author)

Descriptors :   (*SEMICONDUCTORS, INTERFACES), GERMANIUM, SILICON, DISLOCATIONS, IMPURITIES, ELECTRICAL PROPERTIES, ALLOYS, DIFFUSION

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE