Accession Number : AD0647385

Title :   THIN FILM RC NETWORKS FOR SILICON INTEGRATED CIRCUITS.

Descriptive Note : Quarterly rept. no. 1, 1 Aug-1 Nov 66,

Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s) : Terry,Louis

Report Date : JAN 1967

Pagination or Media Count : 49

Abstract : Areas of investigation covered were: (1) A compatible process for depositing and trimming cermet resistors to a target value of 5000 ohms per square plus or minus 5 percent with a yield of 60 percent (87 percent within plus or minus 10 percent) was demonstrated. (2) Evaluation of various flash evaporated metal-dielectric cermet mixtures for 25,000 ohms per square resistor films was initiated. (3) In preliminary experiments, resistor films of 300 and 2000 ohms per square were RF sputtered from large area sources of CrSi2 and mixture 'A' of TaSi2, Cr3Si, and Al2O3. (4) Process of completely compatible thin film capacitors and RF sputtered SiO2 and Al2O3 is presently being completed. (5) Films of BN and Si3N4 were RF sputtered onto silicon wafers. The films were similar to SiO2 and Al2O3, respectively, in quality and dielectric constants. (6) Investigated properties of RF reactive sputtered Ta, Si, Al oxide films. Capacitors (2.3 pF/sq mil - 8 volts) were formed from the dielectrics. (7) RF sputtered SiO2 on wafers containing transistors may decrease beta. The beta degradation is not permanent and can be recovered by a mild wash-bake cleaning cycle. (8) A linear amplifier circuit has been designed and breadboarded for evaluation before proceeding to the integrated thin film resistors and capacitors. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, SILICON), (*FILMS, INTEGRATED CIRCUITS), (*RESISTORS, FILMS), (*CAPACITORS, FILMS), NETWORKS, CERMETS, COMPATIBILITY, SPUTTERING, TRANSISTORS, DEPOSITION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE