Accession Number : AD0648588
Title : JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.
Descriptive Note : Interim scientific rept.,
Corporate Author : ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Holonyak,N. , Jr. ; Sirkis,M. D. ; Clark,G. D. ; Johnson,M. R. ; Moore,J. S.
Report Date : DEC 1966
Pagination or Media Count : 20
Abstract : The effect of the considerable depth of donor impurity states near the indirect <100> conduction band minima on the direct-indirect transition in Ga(AsP) is discussed. A simple technique for using a Ga(AsP) laser to operate a CdSe or Cd(SeS) laser is described. Ultra-thin CdSe lasers of variable mode spacing, including the special case of single-mode operation, are described. Current oscillations in Au-compensated Si p-'i'-n diodes were studied. These oscillations are essentially independent of the external circuit (i.e., they are not negative resistance oscillations) and are not attributable to transit time effects. The various parameters affecting these oscillations were examined, and a space-charge instability model which is in accord with the experimental data is proposed. (Author)
Descriptors : (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), (*LASERS, SEMICONDUCTORS), LUMINESCENCE, SPACE CHARGE, SILICON, GALLIUM ALLOYS, ARSENIC ALLOYS, OSCILLATION, PHOSPHORUS ALLOYS, CADMIUM SELENIDES, CADMIUM COMPOUNDS, SELENIUM COMPOUNDS, SULFUR COMPOUNDS
Subject Categories : Lasers and Masers
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE