Accession Number : AD0648991

Title :   THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.

Descriptive Note : Final rept. 1 Jun 64-31 Jul 66,

Corporate Author : MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s) : Terry,L. E.

Report Date : FEB 1967

Pagination or Media Count : 109

Abstract : The compatibility of certain thin film passive device processing and materials with silicon integrated circuits was verified. In particular, 4000-ohms-per-square resistive and 0.6-pF-per-sq mil capacitive elements have been fabricated on silicon wafers containing a 2N708 transistor. The properties of flash-evaporated cermet resistors were investigated as functions of the process parameters, powder drop rate, source temperature, and system pressure. Radio-frequency dielectric sputtering was briefly investigated and promises to be a major tool in the formation of high quality dielectric films. The electrical characteristics of thin film resistive and capacitive elements were measured at frequencies up to 10 GHz. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, FILMS), (*SILICON, INTEGRATED CIRCUITS), CERMETS, RESISTORS, ANODIC COATINGS, SPUTTERING, DIELECTRICS, CAPACITORS, COMPATIBILITY

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE