Accession Number : AD0649036

Title :   CONTROLLABLE P-N-P-N SWITCHES,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Grinshtein,V. I. ; Shevtsov,V. M.

Report Date : 23 DEC 1966

Pagination or Media Count : 23

Abstract : An elementary description and Soviet-type characteristics of pnpn diodes and pnpn controlled rectifiers are given. The Soviet-make silicon power diodes and rectifiers are manufactured for 10-150 amp, 50-1,000 v. A turn-on current within 2-15 ma was measured in controlled rectifiers of 10-20 amp rated current. Switching voltages at +25, +75, and -60C are reported. A few possible applications are listed. (Author)

Descriptors :   (*ELECTRONIC SWITCHES, *SEMICONDUCTOR DEVICES), USSR, SEMICONDUCTOR DIODES, SILICON CONTROLLED RECTIFIERS, THYRATRONS, TRANSISTORS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE