Accession Number : AD0649334
Title : NEW SOLID-STATE DEVICE CONCEPTS.
Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER
Personal Author(s) : Aven,M. ; Garwacki,W. ; Hall,R. B. ; Hall,R. N. ; Richardson,J. R.
Report Date : DEC 1966
Pagination or Media Count : 80
Abstract : Junction diodes prepared from ZnSexTe1-x pass very little current and emit no light after being cooled in the dark to 80K. A momentary illumination with radiation of h nu >1.9 ev will initiate a steady efficient light emission, and produce an increase in current by a factor of 10 to the 10th power. A mechanism based upon self-induced photoconductivity is proposed to account for this behavior. A consistent model to explain the chalcogen self-diffusion data in the II-VI compounds was demonstrated. They involve the existence of an appreciable concentration of fast-diffusing, neutral, atomic interstitial chalcogen defects over most of the solidus region. Under maximum metal pressure firing conditions, a chalcogen vacancy mechanism may be operative. The properties of gallium arsenide films made by flash evaporation were studied and compared with films made by the three-temperature method. The switching and passive memory characteristics of the latter films are distinctly superior. The unique properties of tellurium as a counterelectrode have been established and are under further study. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, SOLID STATE PHYSICS), CADMIUM SELENIDES, ZINC ALLOYS, SELENIUM ALLOYS, TELLURIUM ALLOYS, LUMINESCENCE, FILMS, GALLIUM ARSENIDES, SEMICONDUCTING FILMS, DIFFUSION, SEMICONDUCTOR DIODES, CHALCOGENS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE