Accession Number : AD0649626

Title :   THERMAL CONDUCTIVITY OF HEAVILY PHOSPHORUS-DOPED SILICON FROM 590K TO 1280K.

Descriptive Note : Master's thesis,

Corporate Author : SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY RAPID CITY DEPT OF PHYSICS

Personal Author(s) : Benbow,Ralph L.

Report Date : 01 APR 1967

Pagination or Media Count : 42

Abstract : The thermal conductivity of n-type silicon was studied at high temperatures. The sample measured was a single-crystal phosphorus-doped at 5 x 10 to the 19 power/cu cm. Measurements were made over temperatures ranging from 588K to 1276K. The series comparative method was used, and Armco iron was used as the standard material. The value of thermal conductivity at 588K was 0.22 watt/(cm-K). The value at 1276K was 0.15 watt/(cm-K). Glassbrenner and Slack give corresponding values of 0.68 watt/(cm-K) and 0.25 watt/(cm-K) for intrinsic silicon. The relative experimental error for measurements was found to be about 20% to 25%. A theory of lattice thermal conductivity, due to Holland, which proposed an inhomogeneous lattice model, was modified by the addition of an electron-phonon term and applied to silicon doped as the sample was doped. The effect of the electron-phonon term was negligible. A value of the disorder parameter Gamma of 0.01 caused the theory to agree well with experiment. However it is difficult to justify this large a value of Gamma. The electronic component of thermal conductivity was found to be approximately two orders of magnitude smaller than the lattice term over the range measured. (Author)

Descriptors :   (*SILICON, THERMAL CONDUCTIVITY), DOPING, PHOSPHORUS, HIGH TEMPERATURE, SEMICONDUCTORS, SINGLE CRYSTALS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE