Accession Number : AD0650041

Title :   HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.

Descriptive Note : Quarterly progress rept. no. 7, 1 Sep-30 Nov 66,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS

Personal Author(s) : Huber,Franz ; Laznovsky,William ; Witt,Walter

Report Date : MAR 1967

Pagination or Media Count : 25

Abstract : The rate of hafnium films deposited with a new sputtering system has been studied in more detail. A hexagonally shaped substrate holder, which rotates to six different positions, allows performance of 5 sputtering runs without breaking the vacuum. Hafnium films can be deposited at a rate of 1200 A/min with a sputtering voltage of 2800 volts after the cathode has been cleaned in a pre-sputtering cleaning cycle lasting 60 minutes. The uniformity of the hafnium films over a 3x5 inch area is plus or minus 2% if a cathode of 6x6 inch size is utilized. A floating technique for hafnium-hafnium-dioxide capacitors has been developed and crystallographic examination of these films has been started. (Author)

Descriptors :   (*FILMS, *HAFNIUM COMPOUNDS), CIRCUITS, VACUUM, PERFORMANCE(ENGINEERING), VOLTAGE, HIGH FREQUENCY, MEASUREMENT

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE