Accession Number : AD0650045
Title : INVESTIGATION OF A PIN-STRUCTURE GERMANIUM PHOTO-VOLTAIC CELL.
Descriptive Note : Semiannual rept., 16 Jan-15 Aug 66,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Wedlock,B. D. ; Siegel,R. ; Hewes,C. R.
Report Date : 28 FEB 1967
Pagination or Media Count : 74
Abstract : A solution to the V-I characteristics of planar P-I-N TPV converter diodes is developed and discussed in contrast to the usual PN devices. Improvements over the conversion efficiencies attained by PN devices seem easily attainable if present technology is adaptable to the new problems involved. A program to fabricate PIN devices was started and several important techniques developed. Both diffused and alloyed junctions were formed over large area samples (1 cm x 1 cm) and the techniques allowed reproducible results. Except for the final problem of forming low resistance contacts on the diffused N layer, the technological problems of the planar PIN diode have been solved. (Author)
Descriptors : (*PHOTOELECTRIC CELLS(SEMICONDUCTOR), GERMANIUM), ENERGY CONVERSION, PERFORMANCE(ENGINEERING), MANUFACTURING
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE