Accession Number : AD0650103
Title : GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Descriptive Note : Quarterly rept. no. 7, 15 Sep-14 Dec 66,
Corporate Author : NORTRONICS NEWBURY PARK CALIF APPLIED RESEARCH DEPT
Personal Author(s) : Raymond,James P. ; Johnson,Robert E.
Report Date : MAR 1967
Pagination or Media Count : 79
Abstract : Electrical and ionizing radiation experiments were performed on junction isolated monolithic integrated transistor and resistor elements and comparisons are presented between their measured and calculated junction areas and electrical and ionizing radiation response. The electrical lumped-model representation of a junction field effect ransistor was developed. The bipolar transistor model was increased in detail so that the following parameters are now variable: collector depletion layer width, collector lifetime, and emitter and collector junction capacitance. A sophisticated numerical integration routine for solving lumped model equations is presented. A test fixture designed to minimize parasitic radiation response is described. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, *DAMAGE), (*TRANSISTORS, DAMAGE), (*INTEGRATED CIRCUITS, DAMAGE), RESISTORS, TRANSIENTS, SEMICONDUCTORS, MATHEMATICAL MODELS, MATHEMATICAL PREDICTION, NUMERICAL METHODS AND PROCEDURES, (U)NUMERICAL METHODS AND PROCEDURES
Subject Categories : Electrical and Electronic Equipment
Radioactiv, Radioactive Wastes & Fission Prod
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE