Accession Number : AD0650738

Title :   THEORY OF OHMIC CONTACTS.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Vilms,Juri ; Wandinger,Lothar

Report Date : FEB 1967

Pagination or Media Count : 19

Abstract : Contact resistivity of a metal-semiconductor area contact is calculated for 10 to the 18th power - 10 to the 20th power/cu cm doping range, for n-type semiconductors and 0.7 - 1.0 eV barrier heights employing a thermionic-field emission model with neglect of barrier width fluctuation. Application to design of ohmic contact to group IV and III-V semiconductors is indicated. A criterion for an electrically good ohmic contact is proposed and the frequently encountered patchiness problem in practical alloy-contact work is discussed. (Author)

Descriptors :   (*SEMICONDUCTORS, CIRCUIT INTERCONNECTIONS), THEORY, DOPING, SILICON, GALLIUM ARSENIDES, THERMIONIC EMISSION, FIELD EMISSION, ELECTRICAL RESISTANCE

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE