Accession Number : AD0651313
Title : HIGH ENERGY ION IMPLANTATION OF MATERIALS.
Descriptive Note : Final rept., 28 Dec 64-28 Dec 66,
Corporate Author : ION PHYSICS CORP BURLINGTON MASS
Personal Author(s) : Leith,F. A. ; King,W. J. ; McNally,P. ; Davies,E. ; Kellett,C. M.
Report Date : JAN 1967
Pagination or Media Count : 54
Abstract : An investigation was conducted on the ion implantation of high energy (>50 kev) dopant ions into semiconductors for the formation of controlled doped layers. As such, it complements the first report with the emphasis in the present one being on device aspects. A brief resume is given of the range-energy, radiation damage and sputtering concepts which are covered in detail in the first report (AD-635 267). The emphasis in the device work has been on demonstration of implantation concepts rather than on development of highly sophisticated devices. To this end, transistor action in both npn and pnp transistors, n-channel junction FET's GaAs diodes and SiC diodes have been demonstrated. Problems peculiar to ion implantation became evident, and a full appreciation of the steps necessary to overcome them was developed only near the end of the program. Examples of these are contacts to shallow implanted layers and overcompensation effects for double implanted layers, both to which severely hampered bipolar transistor development. However, no basic limitations to any of the proposed implantation concepts were discovered and from the results achieved, it now appears that ion implantation will become an important process for active devices in both Group IV and III-V semiconductors. (Author)
Descriptors : (*SEMICONDUCTORS, DOPING), (*ION BOMBARDMENT, *DOPING), (*SEMICONDUCTOR DEVICES, DOPING), TRANSISTORS, FIELD EFFECT TRANSISTORS, SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, BAND THEORY OF SOLIDS, SPUTTERING, ANNEALING, CRYSTAL DEFECTS
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE