Accession Number : AD0651654
Title : DESIGN PARAMETERS AND PROCEDURES FOR FUNCTIONAL ELECTRONIC STRUCTURES.
Descriptive Note : Final rept., 1 Oct 65-31 Jan 67,
Corporate Author : RESEARCH TRIANGLE INST DURHAM N C
Personal Author(s) : Donovan,Robert P.
Report Date : MAY 1967
Pagination or Media Count : 51
Abstract : An empirical calibration of oxide thickness as a function of phosphorus concentration was determined for steam oxidation at 700C for 16 hrs. These calibrating values are regarded as marginally useful in determining impurity profiles by oxidizing a bevel through the diffused layer. Hot hydrogen gas was shown to be an effective reagent for cleaning furnace tubes in situ and for erasing tube history. Both p and n-channel MOS transistors were fabricated in a silicon monolith, using two diffusions only. The electrical performance is sensitive to surface conditions and difficult to control or reproduce. The compromises required in using only two diffusions seem not to be worth the cost in reduced control. (Author)
Descriptors : (*INTEGRATED CIRCUITS, SILICON), (*SILICON, *MICROELECTRONICS), OXIDATION, DOPING, PHOSPHORUS, DIFFUSION, HYDROGEN, BORON, TRANSISTORS, SEMICONDUCTORS, OXIDES, LOGIC CIRCUITS, INVERTER CIRCUITS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE