Accession Number : AD0651858
Title : CHARGE SENSITIVE PREAMPLIFIER USING FIELD-EFFECT TRANSISTORS.
Descriptive Note : Rept. for May 66-Mar 67,
Corporate Author : AIR FORCE WEAPONS LAB KIRTLAND AFB N MEX
Personal Author(s) : East,Larry V.
Report Date : MAY 1967
Pagination or Media Count : 31
Abstract : A general-purpose charge-sensitive Field-Effect Transistors (FET) preamplifier for use with high-resolution solid state radiation detectors is described. The germanium-equivalent noise linewidth of the preamplifier is less than 1.5 keV at room temperature when followed by an amplifier using single RC differentiation and integration time constants of 1 to 2 microseconds. The change in noise linewidth with input capacitance is approximately 0.07 keV/pf. When used with a 4 sq cm x 0.5 cm lithium-drifted germanium detector, an energy resolution of 2.2 keV has been obtained for gamma-rays of 100 keV or less. The entire preamplifier may be operated below room temperature for improved noise performance. (Author)
Descriptors : (*PREAMPLIFIERS, FIELD EFFECT TRANSISTORS), SENSITIVITY, GAMMA RAY SPECTROSCOPY, CIRCUITS
Subject Categories : Electrical and Electronic Equipment
Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE