Accession Number : AD0653190

Title :   INVESTIGATION AND DEVELOPMENT OF SEMICONDUCTOR-METAL CATHODES,

Corporate Author : HEWLETT-PACKARD CO PALO ALTO CALIF

Personal Author(s) : Lerner,Lawrence S. ; Yep,Thomas O. ; Archer,Robert J.

Report Date : APR 1967

Pagination or Media Count : 60

Abstract : Schottky barrier heights for metal-GaAs1-xPx rectifying contacts with vacuum cleaved, atomically clean interfaces decrease slightly and monotonically with metal work function, and show no significant dependence on the chemical nature of the metal. Specifically, the expectation that acceptor metals (Zn, Cd, Mn and Cu) might lead to large barriers was not realized. Au contacts on etch-polished surfaces of GaP and ZnSe are 1.45 eV and 1.47 eV, respectively. The preparation of these 'practical' contacts was aided by an ellipsometric study of surface cleanliness as a function of variations in chemical processing. Cleaner interfaces always lead to more nearly ideal contact properties. The electrical characteristics of all of the barriers (with the probable exception of those on B6P) are sufficiently ideal to indicate that a large fraction of the total forward current is hot electrons injected into the metal. This fact combined with the fact that the barrier heights are in most cases equal to or greater than the value expected for the lowered metal work function establishes the practicality of the semiconductor-metal cathode. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, *CATHODES), (*THERMIONIC EMISSION, CATHODES), INTERFACES, ELECTRIC CONNECTORS, GALLIUM ARSENIDES, PHOSPHIDES, GALLIUM COMPOUNDS, ZINC SULFIDES, ZINC COMPOUNDS, OXIDES, SELENIDES, BORON COMPOUNDS, GOLD, WORK FUNCTIONS, ETCHED CRYSTALS, PHOTOELECTRIC EFFECT

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE