Accession Number : AD0653527

Title :   TUNNEL DIODE,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Logunov,L. A.

Report Date : 23 JAN 1967

Pagination or Media Count : 6

Abstract : The mesa structure of the proposed germanium-base tunnel diode is mounted on a multilayer metal-germanium-glass structure. To decrease the capacitance and inductance and to improve the mechanical stability of the mesa structure, the diode contains an annular germanium plate with an ohmic ring contact on one side, and a metallic plate soldered on the other side through a glass ring gasket. The alloy forming the p-n junction makes contact with the metallic plate and is located inside the germanium ring.

Descriptors :   (*TUNNEL DIODES, MANUFACTURING), SEMICONDUCTOR DIODES, GERMANIUM, USSR, INDUCTANCE, CAPACITANCE, MECHANICAL PROPERTIES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE