Accession Number : AD0653552

Title :   METHOD OF OBTAINING MICROELECTRONIC DIODE MATRIX AND BAND-PASS STRUCTURES,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Savchenko,V. I. ; Sidorenko,S. L.

Report Date : 23 FEB 1967

Pagination or Media Count : 6

Abstract : The production of matrices is simplified and the insulation of blank intersections increased. A germanium plate is subjected to diffusion by Sb vapour in hydrogen at 850C. One of the n layers of the n-p-n structure is removed by electrochemical polishing. The plate is then lined electrolytically with mutually-perpendicular grooves 0.05 mm deep, 0.1-0.15 mm wide with a spacing of 1.4 mm and ground with abrasive powder. A 50 micron copper coating is deposited electrolytically, a polystyrene rectangular network of buses with swellings corresponding to diodes is then superposed and the copper dissolved chemically from the uncovered places. Finally germanium is etched out electrochemically in a 10% solution of NaOH until the p-n germanium bars remain only at intersections. The density of diodes in a matrix amounts to 1200-1400 per 1 cu cm. 14.2.63 as 819016/26-24. (Author)

Descriptors :   (*MICROELECTRONICS, *DIODES), GERMANIUM, ELECTROLYTIC POLISHING, HYDROGEN, COPPER, ELECTROCHEMISTRY, DENSITY, ABRASIVES, SODIUM COMPOUNDS, HYDROXIDES, USSR

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE