Accession Number : AD0653646

Title :   ANGULAR EFFECTS IN A MILLIMETER WAVE SEMICONDUCTOR INTERFEROMETER.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Jacobs,Harold ; Horn,Edward ; Hofar,Ronald ; Morris,George

Report Date : MAR 1967

Pagination or Media Count : 62

Abstract : In a recent investigation, it was shown that electromagnetic radiation incident upon a layered system could give interferometric effects which result in zero reflection. It was shown that for millimeter waves falling upon a system composed of air as the transmitting medium, semiconductor, air, and metal reflector, critical parameters of conductivity, thickness and dielectric constant will give the desired results. Furthermore, by modulating the conductivity of the semiconductor, the reflection coefficient of the system could be varied. In this report, we consider the effects of angular incidence upon the interferometric system. It is concluded that the reflection coefficient is relatively insensitive to angle, and that in the application to the millimeter wave imaging system previously proposed, the optimum condition will be for planar construction of the multilayered device. (Author)

Descriptors :   (*MILLIMETER WAVES, *INTERFEROMETERS), (*SEMICONDUCTORS, MILLIMETER WAVES), IMAGES, REFLECTION, MULTIPLE OPERATION, OPTICS, MATHEMATICAL ANALYSIS, ELECTROMAGNETIC RADIATION, CONDUCTIVITY, OPTICAL PROPERTIES, THICKNESS, AIR, DIELECTRIC PROPERTIES, METALS, TABLES(DATA)

Subject Categories : Optics
      Solid State Physics
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE