Accession Number : AD0654001

Title :   HETEROJUNCTION DEVICES.

Descriptive Note : Interim rept. no. 2, Dec 65-Dec 66,

Corporate Author : SYRACUSE UNIV RESEARCH INST N Y

Personal Author(s) : Anderson,Richard L. ; Zeidenbergs,Girtz ; Huang,Thomas ; Boyce,David ; Davis,Mark

Report Date : MAY 1967

Pagination or Media Count : 139

Abstract : Heterojunctions were prepared by depositing Si epitaxially onto GaAs and GaP substrates using silicon-tellurium compounds as transporting agents. The experimental results are in agreement with the abrupt junction theory for heterojunctions. A quantitative discussion is given for electron tunneling through a Schottky Barrier. An open tube deposition system is described for use in the epitaxial deposition of III-V compounds. Associated water transport problems are discussed. Improvements have been made on a closed tube epitaxial system. A phenomelogical model of the transport and deposition has been formulated which predicts that the ampoule geometry has an appreciable influence on the deposition and may be used as a parameter in the design of an epitaxial system. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, PREPARATION), SILICON, EPITAXIAL GROWTH, GALLIUM ARSENIDES, GALLIUM ALLOYS, PHOSPHORUS ALLOYS, ELECTRICAL PROPERTIES, MANUFACTURING, TRANSPORT PROPERTIES, BAND THEORY OF SOLIDS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE