Accession Number : AD0654009

Title :   JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.

Descriptive Note : Status rept.,

Corporate Author : ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Holonyak,N. , Jr. ; Blouke,M. M. ; Streetman,B. G. ; Crawford,M. G. ; Stillman,G. E.

Report Date : APR 1967

Pagination or Media Count : 14

Abstract : The effect of donor impurity states near the indirect <100> conduction band minima on the direct-indirect transition in Ga(ASP) is discussed. Ultrathin platelet lasers of CdSe and Cd(SeS), including visible spectrum continuous (CW) operation, are described. Instabilities and self-oscillation phenomena in bulk samples of Si compensated with deep levels (Au, Co, etc.) are discussed. (Author)

Descriptors :   (*SEMICONDUCTORS, *GALLIUM ARSENIDES), PHOSPHIDES, LASERS, STABILITY, LUMINESCENCE, SILICON, EXCITATION, CADMIUM SELENIDES, CADMIUM SULFIDES, SELENIUM, ULTRAVIOLET SPECTRA, VISIBLE SPECTRA, DOPING, OSCILLATION

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE