Accession Number : AD0657381

Title :   PRECIPITATION EFFECTS IN SEMICONDUCTORS.

Descriptive Note : Final rept.,

Corporate Author : MINNESOTA UNIV MINNEAPOLIS

Personal Author(s) : Swalin,R. A.

Report Date : AUG 1967

Pagination or Media Count : 7

Abstract : A brief description is presented concerning the results obtained under terms of the Office of Naval Research Contract. Reference is made to the previous technical reports and publications in which complete discussion of the various phenomena is presented. Nucleation of lithium precipitates in Si and Ge; Theoretical calculations relating to diffusion in elemental semiconductors; Thermal diffusion studies; Self-diffusion in silicon; Further precipitation studies.

Descriptors :   (*CRYSTAL DEFECTS, *SEMICONDUCTORS), (*TRANSPORT PROPERTIES, SEMICONDUCTORS), GERMANIUM, SILICON, LITHIUM, NUCLEATION, DIFFUSION, PHYSICAL PROPERTIES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE