Accession Number : AD0658650

Title :   GROWTH OF EPITAXIAL GERMANIUM FILMS FROM SUPERCOOLED DROPS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Shefmal,N. N. ; Givargizov,E. I.

Report Date : 28 FEB 1967

Pagination or Media Count : 14

Abstract : Crystallization of Ge from the gaseous phase formed by the reduction of GeCl4 with H, at (GeCl4):(H2) = 0.0013-0.004, was studied in the high-temp. region, >740C, on single-crystal plates of Ge oriented with (111), (110), and (100) faces. As the gas mixt. approached the plate, it attained a temp. sufficient to form a complex of several atoms. The complex grew rapidly by virtue of the autocatalytic effect of the Ge plate. This was supported by the fact that increasing the temp. of the plate from 740 to 790C increased the amt. of Ge deposited by plus or minus 10%. Reducing the rate of flow of the gas through the tube from 0.9 to 0.3 cm/sec., increased the size of the drop, i.e. the drop grew while still in the gaseous medium and not after it settled on the plate. The deposited film was shown to be a single-cryst. film. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, *EPITAXIAL GROWTH), (*GERMANIUM, SEMICONDUCTING FILMS), USSR, SUPERCOOLING, DROPS, CRYSTALLIZATION, MELTING POINT, REDUCTION(CHEMISTRY), GERMANIUM COMPOUNDS, CHLORIDES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE